NDT3055L
Specifiche
Categoria:
Prodotti di semiconduttori discreti
Transistori
FET, MOSFET
FET singoli, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250μA
Operating Temperature:
-65°C ~ 150°C (TJ)
Confezione / Cassa:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Rds On (Max) @ Id, Vgs:
100mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
345 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-4
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Power Dissipation (Max):
3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDT3055
Introduzione
Canale N 60 V 4A (Ta) 3W (Ta) A montaggio superficiale SOT-223-4
Invii il RFQ
Di riserva:
MOQ: