SIS407DN-T1-GE3
fabbricante:
Vishay Siliconix
Descrizione:
MOSFET P-CH 20V 25A PPAK1212-8
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
93.8 nC @ 8 V
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 15.3A, 4.5V
FET Type:
P-Channel
Tensione di azionamento (max Rds On, min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Voltaggio di scarico alla fonte (Vdss):
20 V
Vgs (Max):
±8V
Status del prodotto:
Attivo
Input Capacitance (Ciss) (Max) @ Vds:
2760 pF @ 10 V
Tipo di montaggio:
Montaggio superficiale
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Power Dissipation (Max):
3.6W (Ta), 33W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIS407
Introduzione
P-Canale 20 V 25A (Tc) 3.6W (Ta), 33W (Tc) Montaggio superficiale PowerPAK® 1212-8
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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