IRFD9120PBF
fabbricante:
Vishay Siliconix
Descrizione:
MOSFET P-CH 100V 1A 4DIP
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Confezione / Cassa:
4 DIP (0,300", 7,62 mm)
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Rds On (Max) @ Id, Vgs:
600mOhm @ 600mA, 10V
FET Type:
P-Channel
Tensione di azionamento (max Rds On, min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
390 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
4-HVMDIP
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Power Dissipation (Max):
1.3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFD9120
Introduzione
P-canale 100 V 1A (Ta) 1.3W (Ta) attraverso foro 4-HVMDIP
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
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|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
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|
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|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
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|
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|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
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|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
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|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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