BSN20BKR
fabbricante:
Nexperia USA Inc.
Descrizione:
MOSFET N-CH 60V 265MA TO236AB
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.49 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
2.8Ohm @ 200mA, 10V
FET Type:
N-Channel
Tensione di azionamento (max Rds On, min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Voltaggio di scarico alla fonte (Vdss):
60 V
Vgs (Max):
±20V
Status del prodotto:
Attivo
Input Capacitance (Ciss) (Max) @ Vds:
20.2 pF @ 30 V
Tipo di montaggio:
Montaggio superficiale
Series:
-
Supplier Device Package:
TO-236AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
265mA (Ta)
Power Dissipation (Max):
310mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSN20
Introduzione
N-canale 60 V 265mA (Ta) 310mW (Ta) Montatura di superficie TO-236AB
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
BUK7Y22-100EX |
MOSFET N-CH 100V 49A LFPAK56
|
|
|
|
PMV27UPEAR |
MOSFET P-CH 20V 4.5A TO236AB
|
|
|
|
PSMN8R7-100YSFX |
PSMN8R7-100YSF/SOT669/LFPAK
|
|
|
|
BUK7Y7R6-40EX |
MOSFET N-CH 40V 79A LFPAK56
|
|
|
|
BUK9M120-100EX |
MOSFET N-CH 100V 11.5A LFPAK33
|
|
|
|
PSMN3R7-100BSEJ |
MOSFET N-CH 100V 120A D2PAK
|
|
|
|
PSMN2R0-30PL,127 |
MOSFET N-CH 30V 100A TO220AB
|
|
|
|
BUK7Y7R0-40HX |
MOSFET N-CH 40V 68A LFPAK56
|
|
|
|
BUK7M10-40EX |
MOSFET N-CH 40V 56A LFPAK33
|
|
|
|
BUK9Y65-100E,115 |
MOSFET N-CH 100V 19A LFPAK56
|
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