FDMS8050ET30
fabbricante:
ONSEMI
Descrizione:
MOSFET N-CH 30V 55A/423A POWER56
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 750µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Carica della porta (Qg) (Max) @ Vgs:
285 nC @ 10 V
Rds On (Max) @ Id, Vgs:
0.65mOhm @ 55A, 10V
Tipo di FET:
Canale N
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
pacchetto:
Nastro e bobina (TR)
Nastro di taglio (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
± 20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
22610 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
55A (Ta), 423A (Tc)
Power Dissipation (Max):
3.3W (Ta), 180W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS8050
Introduzione
N-canale 30 V 55A (Ta), 423A (Tc) 3.3W (Ta), 180W (Tc) Montatura superficiale 8-PQFN (5x6)
Invii il RFQ
Di riserva:
MOQ: