SISS23DN-T1-GE3
fabbricante:
Vishay Siliconix
Descrizione:
MOSFET P-CH 20V 50A PPAK 1212-8S
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-50°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs:
300 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 20A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Capacità di ingresso (Ciss) (Max) @ Vds:
8840 pF @ 15 V
Mounting Type:
Surface Mount
Serie:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8S
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Dissipazione di potere (massima):
4.8W (Ta), 57W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISS23
Introduzione
P-Channel 20 V 50A (Tc) 4.8W (Ta), 57W (Tc) PowerPAK® 1212-8S
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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