SQ7415CENW-T1_GE3
fabbricante:
Vishay Siliconix
Descrizione:
AUTOMOTIVE P-CHANNEL 60-V (D-S)
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Product Status:
Active
Tipo di montaggio:
Montaggio superficiale
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Capacità di ingresso (Ciss) (Max) @ Vds:
1385 pF @ 25 V
Series:
Automotive, AEC-Q101, TrenchFET®
Vgs (Max):
± 20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Confezione del dispositivo del fornitore:
PowerPAK® 1212-8W
Rds On (Max) @ Id, Vgs:
65mOhm @ 5.7A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
53W (Tc)
Package / Case:
PowerPAK® 1212-8W
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduzione
P-Channel 60 V 16A (Tc) 53W (Tc) PowerPAK® 1212-8W
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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