FDMS7672
fabbricante:
ONSEMI
Descrizione:
MOSFET N-CH 30V 19A/28A 8PQFN
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Confezione / Cassa:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
Rds On (Max) @ Id, Vgs:
5mOhm @ 19A, 10V
FET Type:
N-Channel
Tensione di azionamento (max Rds On, min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Voltaggio di scarico alla fonte (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2960 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 28A (Tc)
Power Dissipation (Max):
2.5W (Ta), 48W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS76
Introduzione
N-canale 30 V 19A (Ta), 28A (Tc) 2,5W (Ta), 48W (Tc) Superficie montata 8-PQFN (5x6)
Invii il RFQ
Di riserva:
MOQ: