FDMS5672
fabbricante:
ONSEMI
Descrizione:
MOSFET N-CH 60V 10.6A/22A 8MLP
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Confezione / Cassa:
8-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Rds On (Max) @ Id, Vgs:
11.5mOhm @ 10.6A, 10V
FET Type:
N-Channel
Tensione di azionamento (max Rds On, min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Voltaggio di scarico alla fonte (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2800 pF @ 30 V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
8-MLP (5x6), Power56
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
10.6A (Ta), 22A (Tc)
Power Dissipation (Max):
2.5W (Ta), 78W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS56
Introduzione
N-Canale 60 V 10.6A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Superficie montata 8-MLP (5x6), Power56
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