FDD2572
fabbricante:
ONSEMI
Descrizione:
MOSFET N-CH 150V 4A/29A TO252AA
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Caratteristica del FET:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Temperatura di funzionamento:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Rds On (Max) @ Id, Vgs:
54mOhm @ 9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1770 pF @ 25 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-252AA
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
4A (Ta), 29A (Tc)
Power Dissipation (Max):
135W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDD257
Introduzione
N-canale 150 V 4A (Ta), 29A (Tc) 135W (Tc) Supposizione TO-252AA
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