IXTT16N20D2
fabbricante:
IXYS
Descrizione:
MOSFET N-CH 200V 16A TO268
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
Depletion Mode
Vgs(th) (Max) @ Id:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:
208 nC @ 5 V
Rds On (Max) @ Id, Vgs:
73mOhm @ 8A, 0V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
-
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5500 pF @ 25 V
Tipo di montaggio:
Montaggio superficiale
Series:
Depletion
Confezione del dispositivo del fornitore:
TO-268AA
Mfr:
IXYS
Corrente - scarico continuo (Id) @ 25°C:
16A (TC)
Power Dissipation (Max):
695W (Tc)
Tecnologia:
MOSFET (ossido di metallo)
Base Product Number:
IXTT16
Introduzione
N-canale 200 V 16A (Tc) 695W (Tc) Montatura di superficie TO-268AA
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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