RFP50N06
fabbricante:
ONSEMI
Descrizione:
MOSFET N-CH 60V 50A TO220-3
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Caratteristica del FET:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Temperatura di funzionamento:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Carica della porta (Qg) (Max) @ Vgs:
150 nC @ 20 V
Rds On (Max) @ Id, Vgs:
22mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2020 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Power Dissipation (Max):
131W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFP50
Introduzione
N-canale 60 V 50A (Tc) 131W (Tc) attraverso il foro TO-220-3
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Di riserva:
MOQ: