FDB045AN08A0
fabbricante:
ONSEMI
Descrizione:
MOSFET N-CH 75V 19A/90A D2PAK
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
138 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
± 20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6600 pF @ 25 V
Tipo di montaggio:
Montaggio superficiale
Series:
PowerTrench®
Confezione del dispositivo del fornitore:
D²PAK (TO-263)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 90A (Tc)
Power Dissipation (Max):
310W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB045
Introduzione
N-canale 75 V 19A (Ta), 90A (Tc) 310W (Tc) Supposizione D2PAK (TO-263)
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