FCP104N60F
fabbricante:
ONSEMI
Descrizione:
MOSFET N-CH 600V 37A TO220-3
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
145 nC @ 10 V
Rds On (Max) @ Id, Vgs:
104mOhm @ 18.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
6130 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar™
Supplier Device Package:
TO-220-3
Mfr:
ONSEMI
Current - Continuous Drain (Id) @ 25°C:
37A (Tc)
Dissipazione di potere (massima):
357W (TC)
Technology:
MOSFET (Metal Oxide)
Numero del prodotto di base:
FCP104
Introduzione
N-canale 600 V 37A (Tc) 357W (Tc) attraverso il foro TO-220-3
Invii il RFQ
Di riserva:
MOQ: