NVTFS5116PLWFTAG
fabbricante:
ONSEMI
Descrizione:
MOSFET P-CH 60V 6A 8WDFN
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Rds On (Max) @ Id, Vgs:
52mOhm @ 7A, 10V
Tipo di FET:
P-Manica
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Pacco:
Nastro e bobina (TR)
Nastro di taglio (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
± 20V
Product Status:
Active
Capacità di ingresso (Ciss) (Max) @ Vds:
1258 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
8-WDFN (3.3x3.3)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Power Dissipation (Max):
3.2W (Ta), 21W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVTFS5116
Introduzione
P-Canale 60 V 6A (Ta) 3.2W (Ta), 21W (Tc) Superficie montata 8-WDFN (3.3x3.3)
Invii il RFQ
Di riserva:
MOQ: