FDB3652
fabbricante:
ONSEMI
Descrizione:
MOSFET N-CH 100V 9A/61A D2PAK
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
53 nC @ 10 V
Rds On (Max) @ Id, Vgs:
16mOhm @ 61A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
2880 pF @ 25 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Confezione del dispositivo del fornitore:
D²PAK (TO-263)
Mfr:
onsemi
Corrente - scarico continuo (Id) @ 25°C:
9A (Ta), 61A (Tc)
Power Dissipation (Max):
150W (Tc)
Tecnologia:
MOSFET (ossido di metallo)
Base Product Number:
FDB365
Introduzione
N-canale 100 V 9A (Ta), 61A (Tc) 150W (Tc) Supposizione D2PAK (TO-263)
Invii il RFQ
Di riserva:
MOQ: