FQD10N20LTM
fabbricante:
ONSEMI
Descrizione:
MOSFET N-CH 200V 7.6A TO252
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Categoria:
Prodotti di semiconduttori discreti
Transistori
FET, MOSFET
FET singoli, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250μA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 5 V
Rds On (Max) @ Id, Vgs:
360mOhm @ 3.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
830 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D-Pak
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
7.6A (Tc)
Power Dissipation (Max):
2.5W (Ta), 51W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQD10N20
Introduzione
N-canale 200 V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount D-Pak
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Di riserva:
MOQ: