FQPF4N90C
fabbricante:
ONSEMI
Descrizione:
MOSFET N-CH 900V 4A TO220F
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Confezione / Cassa:
Pacchetto completo TO-220-3
Carica della porta (Qg) (Max) @ Vgs:
22 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.2Ohm @ 2A, 10V
Tipo di FET:
Canale N
Drive Voltage (Max Rds On, Min Rds On):
10V
pacchetto:
Tubo
Drain to Source Voltage (Vdss):
900 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
960 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220F-3
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Power Dissipation (Max):
47W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQPF4
Introduzione
N-canale 900 V 4A (Tc) 47W (Tc) attraverso il foro TO-220F-3
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Di riserva:
MOQ: