FCA20N60
fabbricante:
ONSEMI
Descrizione:
MOSFET N-CH 600V 20A TO3PN
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
98 nC @ 10 V
Rds On (Max) @ Id, Vgs:
190 mOhm @ 10A, 10V
Tipo di FET:
Canale N
Drive Voltage (Max Rds On, Min Rds On):
10V
pacchetto:
Tubo
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
3080 pF @ 25 V
Mounting Type:
Through Hole
Series:
SuperFET™
Supplier Device Package:
TO-3PN
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Power Dissipation (Max):
208W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCA20
Introduzione
N-canale 600 V 20A (Tc) 208W (Tc) attraverso foro TO-3PN
Invii il RFQ
Di riserva:
MOQ: