IXFN210N30P3
fabbricante:
IXYS
Descrizione:
MOSFET N-CH 300V 192A SOT227B
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Categoria:
Prodotti di semiconduttori discreti
Transistori
FET, MOSFET
FET singoli, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Confezione / Cassa:
SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs:
268 nC @ 10 V
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 105A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
16200 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Polar3™
Supplier Device Package:
SOT-227B
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
192A (Tc)
Power Dissipation (Max):
1500W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN210
Introduzione
N-canale 300 V 192A (Tc) 1500W (Tc) montatura del telaio SOT-227B
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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