PSMN025-80YLX
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
17.1 nC @ 5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Capacità di ingresso (Ciss) (Max) @ Vds:
2703 pF @ 25 V
Series:
-
Vgs (Max):
± 20V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Confezione del dispositivo del fornitore:
LFPAK56, Power-SO8
Rds On (Max) @ Id, Vgs:
25mOhm @ 10A, 10V
Mfr:
NXP USA Inc.
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Power Dissipation (Max):
95W (Tc)
Package / Case:
SC-100, SOT-669
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
37A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduzione
N-canale 80 V 37A (Tc) 95W (Tc) Supporto di superficie LFPAK56, Power-SO8
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