IXFH50N85X
fabbricante:
IXYS
Descrizione:
MOSFET N-CH 850V 50A TO247
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Categoria:
Prodotti di semiconduttori discreti
Transistori
FET, MOSFET
FET singoli, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Confezione / Cassa:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
152 nC @ 10 V
Rds On (Max) @ Id, Vgs:
105 mOhm @ 500 mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
850 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4480 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X
Supplier Device Package:
TO-247 (IXTH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Power Dissipation (Max):
890W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH50
Introduzione
N-canale 850 V 50A (Tc) 890W (Tc) attraverso foro TO-247 (IXTH)
Prodotti correlati
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IXFK27N80
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IXFH20N80Q
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IXFH15N80
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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