RQ3E100ATTB
fabbricante:
Semiconduttore Rohm
Descrizione:
MOSFET P-CH 30V 10A/31A 8HSMT
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Confezione / Cassa:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Rds On (Max) @ Id, Vgs:
11.4mOhm @ 10A, 10V
Tipo di FET:
P-Manica
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1900 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-HSMT (3.2x3)
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 31A (Tc)
Power Dissipation (Max):
2W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RQ3E100
Introduzione
P-Canale 30 V 10A (Ta), 31A (Tc) 2W (Ta) Montatura superficiale 8-HSMT (3.2x3)
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
|
|
|
|
RRR040P03TL |
MOSFET P-CH 30V 4A TSMT3
|
|
|
|
RSR025P03TL |
MOSFET P-CH 30V 2.5A TSMT3
|
|
|
|
RS1L120GNTB |
MOSFET N-CH 60V 12A/36A 8HSOP
|
|
|
|
RUM003N02T2L |
MOSFET N-CH 20V 300MA VMT3
|
|
|
|
RD3P130SPTL1 |
MOSFET P-CH 100V 13A TO252
|
|
|
|
RD3H200SNTL1 |
MOSFET N-CH 45V 20A TO252
|
|
|
|
RSR025N05TL |
NCH 45V 2.5A SMALL SIGNAL MOSFET
|
|
|
|
RD3P050SNTL1 |
MOSFET N-CH 100V 5A TO252
|
|
|
|
RV2C010UNT2L |
MOSFET N-CH 20V 1A DFN1006-3
|
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