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RS1L120GNTB

fabbricante:
Semiconduttore Rohm
Descrizione:
MOSFET N-CH 60V 12A/36A 8HSOP
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.7V @ 200μA
Operating Temperature:
150°C (TJ)
Confezione / Cassa:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Rds On (Max) @ Id, Vgs:
12.7mOhm @ 12A, 10V
FET Type:
N-Channel
Tensione di azionamento (max Rds On, min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1330 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-HSOP
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 36A (Tc)
Power Dissipation (Max):
3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RS1L
Introduzione
N-canale 60 V 12A (Ta), 36A (Tc) 3W (Ta) Supposizione superficiale 8-HSOP
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