IXTA3N150HV

fabbricante:
IXYS
Descrizione:
MOSFET N-CH 1500V 3A TO263
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
38.6 nC @ 10 V
Rds On (Max) @ Id, Vgs:
7.3Ohm @ 1.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1500 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1375 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Dissipazione di potere (massima):
250W (TC)
Technology:
MOSFET (Metal Oxide)
Numero del prodotto di base:
IXTA3
Introduzione
N-canale 1500 V 3A (Tc) 250W (Tc) Montatura di superficie TO-263AA
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Di riserva:
MOQ: