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IXFK80N60P3

fabbricante:
IXYS
Descrizione:
MOSFET N-CH 600V 80A TO264AA
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
190 nC @ 10 V
Rds On (Max) @ Id, Vgs:
70mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
pacchetto:
Tubo
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Capacità di ingresso (Ciss) (Max) @ Vds:
13100 pF @ 25 V
Mounting Type:
Through Hole
Serie:
HiPerFETTM, Polar3TM
Supplier Device Package:
TO-264AA (IXFK)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Power Dissipation (Max):
1300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFK80
Introduzione
N-canale 600 V 80A (Tc) 1300W (Tc) attraverso foro TO-264AA (IXFK)
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