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IXFK32N100Q3

fabbricante:
IXYS
Descrizione:
MOSFET N-CH 1000V 32A TO264AA
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
195 nC @ 10 V
Rds On (Max) @ Id, Vgs:
320mOhm @ 16A, 10V
Tipo di FET:
Canale N
Drive Voltage (Max Rds On, Min Rds On):
10V
Pacco:
Tubo
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Capacità di ingresso (Ciss) (Max) @ Vds:
9940 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Q3 Class
Supplier Device Package:
TO-264AA (IXFK)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
32A (Tc)
Power Dissipation (Max):
1250W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFK32
Introduzione
N-canale 1000 V 32A (Tc) 1250W (Tc) attraverso foro TO-264AA (IXFK)
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