IXFP4N85X
fabbricante:
IXYS
Descrizione:
MOSFET N-CH 850V 3.5A TO220AB
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Categoria:
Prodotti di semiconduttori discreti
Transistori
FET, MOSFET
FET singoli, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Confezione / Cassa:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.5 Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
850 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
247 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X
Supplier Device Package:
TO-220AB (IXFP)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFP4N85
Introduzione
N-canale 850 V 3.5A (Tc) 150W (Tc) attraverso foro TO-220AB (IXFP)
Prodotti correlati
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
|
|
|
IXFN38N100Q2 |
MOSFET N-CH 1000V 38A SOT-227
|
|
|
|
IXFN44N100P |
MOSFET N-CH 1000V 37A SOT-227B
|
|
|
|
IXTB30N100L |
MOSFET N-CH 1000V 30A PLUS264
|
|
|
|
IXFN130N30 |
MOSFET N-CH 300V 130A SOT-227B
|
|
|
|
IXFN210N30P3 |
MOSFET N-CH 300V 192A SOT227B
|
|
|
|
IXFN70N60Q2 |
MOSFET N-CH 600V 70A SOT-227B
|
|
|
|
IXFN48N50 |
MOSFET N-CH 500V 48A SOT-227B
|
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