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IXFK102N30P

fabbricante:
IXYS
Descrizione:
MOSFET N-CH 300V 102A TO264AA
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Caratteristica del FET:
-
Vgs(th) (Max) @ Id:
5V @ 4mA
Temperatura di funzionamento:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Carica della porta (Qg) (Max) @ Vgs:
224 nC @ 10 V
Rds On (Max) @ Id, Vgs:
33mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Box
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7500 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-264AA (IXFK)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
102A (Tc)
Power Dissipation (Max):
700W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFK102
Introduzione
N-canale 300 V 102A (Tc) 700W (Tc) attraverso foro TO-264AA (IXFK)
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