IXFN32N80P
fabbricante:
IXYS
Descrizione:
MOSFET N-CH 800V 29A SOT-227B
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 10 V
Rds On (Max) @ Id, Vgs:
270mOhm @ 16A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Status del prodotto:
Attivo
Input Capacitance (Ciss) (Max) @ Vds:
8820 pF @ 25 V
Tipo di montaggio:
Montaggio del telaio
Series:
HiPerFET™, Polar
Confezione del dispositivo del fornitore:
SOT-227B
Mfr:
IXYS
Corrente - scarico continuo (Id) @ 25°C:
29A (TC)
Power Dissipation (Max):
625W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN32
Introduzione
N-canale 800 V 29A (Tc) 625W (Tc) montatura del telaio SOT-227B
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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