SCT3030KLGC11
fabbricante:
Semiconduttore Rohm
Descrizione:
SICFET N-CH 1200V 72A TO247N
Categoria:
Prodotti a semiconduttori discreti
Specifiche
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.6V @ 13.3mA
Temperatura di funzionamento:
175°C (TJ)
Package / Case:
TO-247-3
Carica della porta (Qg) (Max) @ Vgs:
131 nC @ 18 V
Rds On (Max) @ Id, Vgs:
39mOhm @ 27A, 18V
Tipo di FET:
Canale N
Drive Voltage (Max Rds On, Min Rds On):
18V
pacchetto:
Tubo
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2222 pF @ 800 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247N
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
72A (Tc)
Power Dissipation (Max):
339W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT3030
Introduzione
N-canale 1200 V 72A (Tc) 339W (Tc) attraverso il foro TO-247N
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
|
|
RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
|
|
|
|
RRR040P03TL |
MOSFET P-CH 30V 4A TSMT3
|
|
|
|
RSR025P03TL |
MOSFET P-CH 30V 2.5A TSMT3
|
|
|
|
RS1L120GNTB |
MOSFET N-CH 60V 12A/36A 8HSOP
|
|
|
|
RUM003N02T2L |
MOSFET N-CH 20V 300MA VMT3
|
|
|
|
RD3P130SPTL1 |
MOSFET P-CH 100V 13A TO252
|
|
|
|
RD3H200SNTL1 |
MOSFET N-CH 45V 20A TO252
|
|
|
|
RSR025N05TL |
NCH 45V 2.5A SMALL SIGNAL MOSFET
|
|
|
|
RD3P050SNTL1 |
MOSFET N-CH 100V 5A TO252
|
|
|
|
RQ3E100ATTB |
MOSFET P-CH 30V 10A/31A 8HSMT
|
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