Filtri
Filtri
Memoria
| Immagine | parte # | Descrizione | fabbricante | Di riserva | RFQ | |
|---|---|---|---|---|---|---|
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C4G80325FB-HC25 |
Memoria grafica
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Semiconduttore Samsung
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M29DW128G70NF6E |
NOR Flash Parallela 128Mbit 16 56/56
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STMicroelettronica
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IS41LV16100C-50KLI-TR |
DRAM 16M, 3.3V, 50ns 1Mx16 EDO DRAM Async
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ISSI
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IS43TR16256AL-15HBLI |
DRAM 4G, 1.35V, 1333Mhz DDR3L SDAM
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ISSI
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S29CD016J0PQAM113 |
Memoria flash né
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Semiconduttore di cipresso
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IS43TR16640A-125JBLI |
DRAM 1G, 1.5V, (64M x 16) 1600Mhz DDR3 SDRAM
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ISSI
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IS41C16100C-50KLI |
DRAM 16M, 5V, 50ns 1Mx16 EDO DRAM Async
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ISSI
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IS43TR16128B-15HBLI |
DRAM 2G, 1.5V, 1333MT/s 128Mx16 DDR3 SDRAM
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ISSI
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IS43TR16128B-125KBLI |
DRAM 2G, 1.5V, 1600MT/s 128Mx16 DDR3 SDRAM
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ISSI
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IS43TR16256A-125KBLI |
DRAM 4G, 1.5V, 1600Mhz DDR3 SDRAM
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ISSI
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IS43TR16256AL-125KBL |
DRAM 4G, 1.35V, 1600Mhz DDR3L SDAM
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ISSI
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S29GL128N90FFAR22 |
Memoria flash né
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Semiconduttore di cipresso
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THGBMFG6C1LBAIL |
Memoria flash 8 GB NAND EEPROM
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Toshiba
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S29GL032N90FFIS30 |
Parallelo di memoria flash 32Mb 3V 90ns NÉ istantaneo
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Semiconduttore di cipresso
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TC58BVG1S3HTAI0 |
EEPROM 3.3V, 2 Gbit CMOS e NAND EEPROM
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Toshiba
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THGBMHG7C1LBAIL |
Memoria flash NAND EEPROM da 16 GB con CQ
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Toshiba
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S70FL256P0XMFI001 |
Memoria flash 256M, 3.0V, 104Mhz SPI NÉ flash
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Semiconduttore di cipresso
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S25FL116K0XMFI041 |
Memoria flash 16M, 3V, 108Mhz di serie NÉ istantaneo
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Semiconduttore di cipresso
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IS25LQ020B-JNLE-TR |
Memoria flash 2Mb QSPI, 8-pin SOP 150Mil, RoHS, ET, T&R
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ISSI
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IS25LQ032B-JBLE |
Memoria flash 32M SPI, un CONTENTINO 208mil ET 2.3-3.6V di 8 perni
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ISSI
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TC58NVG1S3HBAI4 |
EEPROM 3.3V, 2 Gbit CMOS e NAND EEPROM
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Toshiba
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TC58NVG2S0HBAI4 |
EEPROM 3.3V, 4 Gbit CMOS e NAND EEPROM
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Toshiba
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TC58BVG0S3HTAI0 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
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Toshiba
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S29JL032J70TFI220 |
Parallelo di memoria flash 32MB 3.0V 70ns NÉ istantaneo istantaneo
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Semiconduttore di cipresso
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S34MS04G100BHI000 |
Memoria flash NAND Flash 4G, 1,8 V, 45 ns
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Spansione / Cipresso
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S34ML01G200BHV000 |
Memoria flash NAND
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Semiconduttore di cipresso
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S34MS01G100BHI000 |
Memoria flash 1G, 1.8V, 45ns NAND Flash
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Spansione / Cipresso
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S29GL032N90TFI023 |
Parallelo di memoria flash 32MB 2.7-3.6V 90ns NÉ istantaneo
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Semiconduttore di cipresso
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IS25WP016D-JULE-TR |
NOR Flash 16Mb QSPI, USON 8 pin 2X3MM, RoHS, T&R
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ISSI
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TC58NVG1S3HTA00 |
EEPROM 3.3V, 2 Gbit CMOS e NAND EEPROM
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Toshiba
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TC58BVG1S3HTA00 |
EEPROM 3.3V, 2 Gbit CMOS e NAND EEPROM
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Toshiba
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TC58NVG0S3HTA00 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
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Toshiba
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TC58BVG2S0HTAI0 |
EEPROM 3.3V, 4 Gbit CMOS e NAND EEPROM
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Toshiba
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IS43TR16256A-125KBLI-TR |
DRAM 4G, 1.5V, 1600Mhz DDR3
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ISSI
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IS43TR16256A-107MBLI |
DRAM 4G, 1.5V, 1866MHz 256Mx16 DDR3 SDRAM
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ISSI
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IS43TR16128CL-125KBL |
DRAM 2G 128Mx16 1600MT/s
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ISSI
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IS43TR16128B-15HBL |
DRAM 2G, 1.5V, 1333MT/s 128Mx16 DDR3 SDRAM
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ISSI
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IS43TR16512AL-125KBL |
DRAM DDR3L,8G,1.5V,RoHs 1600MT/s,512Mx16
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ISSI
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IS43DR16128B-25EBLI |
DRAM 2G, 1.8V, DDR2, 128Mx16, 400Mhz @ CL6, 84 palle BGA (10.5mmx13.5mm) RoHS, IT
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ISSI
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IS43TR16256AL-125KBLI |
DRAM 4G, 1.35V, 1600Mhz DDR3L SDAM
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ISSI
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IS46TR16128B-15HBLA1 |
DRAM Automotive (Tc: -40 a +95C), 2G, 1.5V, DDR3, 128Mx16, 1333MT/s @ 9-9-9, 96 sfere BGA (9mm x13mm
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ISSI
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IS41LV16100C-50TLI |
DRAM 16M, 3.3V, 50ns 1Mx16 EDO DRAM Async
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ISSI
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IS43TR16128BL-125KBL |
DRAM 2G, 1,35V, 1600MT/s 128Mx16 DDR3L SDRAM
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ISSI
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IS43TR16512AL-125KBLI |
DRAM DDR3L,8G,1.35V,RoHs 1600MT/s,512Mx16, IT
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ISSI
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MT40A512M16TB-062E: J |
DRAM DDR4 8G 512Mx16 FBGA
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Tecnologia Micron
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S29GL512P11FFI020 |
Parallelo di memoria flash 512Mb 3V 110ns NÉ istantaneo
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Semiconduttore di cipresso
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S25FL116K0XMFI011 |
Memoria flash 16M, 3V, 108Mhz di serie NÉ istantaneo
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Semiconduttore di cipresso
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TC58NVG1S3ETA00 |
Memoria flash 1Gb 3.3V SLC NAND Flash EEPROM seriale
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Toshiba
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TH58NVG4S0FTA20 |
Memoria flash 3.3V 16Gbit NAND EEPROM
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Toshiba
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DS2432P+T&R |
EEPROM
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ADI/Analog Devices Inc.
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