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Immagineparte #DescrizionefabbricanteDi riservaRFQ
IS43TR16640BL-107MBLI

IS43TR16640BL-107MBLI

DRAM 1G, 1.35V, DDR3L, 64Mx16, 1866MT/s @ 13-13-13, 96 palla BGA (9mm x13mm) RoHS, IT
ISSI
IS43TR16256A-125KBL

IS43TR16256A-125KBL

DRAM 4G, 1.5V, 1600Mhz DDR3 SDRAM
ISSI
IS43DR16128A-3DBLI

IS43DR16128A-3DBLI

DRAM 2G 1.8V DDR2 128Mx16 333Mhz@CL5 84 BGA
ISSI
IS41C16105C-50KLI

IS41C16105C-50KLI

DRAM 16M, 5V, 50ns 1Mx16 Fast Page DRAM
ISSI
IS41LV16100C-50KLI

IS41LV16100C-50KLI

DRAM 16M, 3.3V, 50ns 1Mx16 EDO DRAM Async
ISSI
IS43TR16640B-15GBLI

IS43TR16640B-15GBLI

DRAM 1G, 1.5V, DDR3, 64Mx16, 1333MT/s @ 8-8-8, 96 sfera BGA (9mm x13mm) RoHS, IT
ISSI
IS43TR16256A-15HBLI

IS43TR16256A-15HBLI

DRAM 4G, 1.5V, 1333Mhz DDR3 SDRAM
ISSI
IS46TR16256AL-125KBLA2

IS46TR16256AL-125KBLA2

DRAM 4G, 1,35V, 1600MT/s DDR3 SDRAM
ISSI
IS43TR16640B-125JBLI-TR

IS43TR16640B-125JBLI-TR

DRAM 1G, 1.5V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 palla BGA (9mm x13mm) RoHS, IT, T&R
ISSI
IS46TR16256A-15HBLA2

IS46TR16256A-15HBLA2

DRAM 4G, 1,5V, 1333MT/s DDR3 SDRAM
ISSI
IS43DR16128B-25EBL

IS43DR16128B-25EBL

DRAM 2G, 1.8V, DDR2, 128Mx16, 400Mhz @ CL6, 84 palle BGA (10.5mmx13.5mm) RoHS
ISSI
IS43LR16320B-6BLI

IS43LR16320B-6BLI

DRAM 512M, 1.8V, 166Mhz 32Mx16 DDR Mobile
ISSI
IS43TR16128BL-125KBLI

IS43TR16128BL-125KBLI

DRAM 2G, 1,35V, 1600MT/s 128Mx16 DDR3L SDRAM
ISSI
IS43TR16640A-15GBL

IS43TR16640A-15GBL

DRAM 1G, 1.5V, (64M x 16) 1300Mhz DDR3 SDRAM
ISSI
IS41LV16105C-50KLI

IS41LV16105C-50KLI

DRAM 16M, 3.3V, 50ns 1Mx16 Fast Page DRAM
ISSI
IS46TR16256A-15HBLA1

IS46TR16256A-15HBLA1

DRAM 4G, 1,5V, 1333MT/s DDR3 SDRAM
ISSI
IS43TR16640A-15GBLI

IS43TR16640A-15GBLI

DRAM 1G, 1.5V, (64M x 16) 1300Mhz DDR3 SDRAM
ISSI
AT25SF041-SSHD-T

AT25SF041-SSHD-T

IC FLASH 4M SPI 104MHZ 8SOIC
Tecnologie di Adesto
MX25L12835FMI-10G

MX25L12835FMI-10G

IC FLASH 128M SPI 104MHZ 16SOP
MXIC, Macronix.
MX25R2035FZUIL0

MX25R2035FZUIL0

IC FLASH 2M SPI 33MHZ 8USON
MXIC, Macronix.
MX30LF2G18AC-TI

MX30LF2G18AC-TI

IC FLASH 2G PARALLEL 48TSOP
MXIC, Macronix.
M24C64-RMN6TP

M24C64-RMN6TP

IC EEPROM 64K I2C 1MHZ 8SO
STMicroelettronica
MX30LF1G18AC-TI

MX30LF1G18AC-TI

IC FLASH 1G PARALLEL 48TSOP
MXIC, Macronix.
MT41K512M8DA-107: P

MT41K512M8DA-107: P

IC DRAM 4G PARALLEL 78FBGA
Tecnologia Micron
MX29LV160DBTI-70G

MX29LV160DBTI-70G

IC FLASH 16M PARALLEL 48TSOP
MXIC, Macronix.
MT41K64M16TW-107: J

MT41K64M16TW-107: J

IC DRAM 1G PARALLEL 96FBGA
Tecnologia Micron
M24C64-RDW6TP

M24C64-RDW6TP

IC EEPROM 64K I2C 1MHZ 8TSSOP
STMicroelettronica
MX68GL1G0GHT2I-10G

MX68GL1G0GHT2I-10G

IC Flash 1GBIT
MXIC, Macronix.
AT21CS01-MSHMHU-T

AT21CS01-MSHMHU-T

EEPROM SEEPROM, 1K, SW - 1,7-3,6V, 125Kbps, Ind Tmp, 2-XSFN
Tecnologia Atmel/Microchip
NT1comunicazione

NT1comunicazione

DDR3 (L) 1 GB SDRAM commerciale, industriale e automobilistica
Tecnologia Nanya
SST39VF040-70-4C-NHE

SST39VF040-70-4C-NHE

Annuncio pubblicitario di memoria flash 4M (512Kx8) 70ns 2.7-3.6V
Tecnologia dei microchip
S29GL064S70TFI010

S29GL064S70TFI010

Parallelo 64Mb, 3.0V di memoria flash NÉ istantaneo
Semiconduttore di cipresso