Filtri
Filtri
Transistor
| Immagine | parte # | Descrizione | fabbricante | Di riserva | RFQ | |
|---|---|---|---|---|---|---|
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SPW47N60CFD |
MOSFET N-Ch 600V 46A TO247-3 CoolMOS CFD
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Tecnologie Infineon
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SI7625DN-T1-GE3 |
MOSFET -30V 7mOhm@10V 35A P-Ch G-III
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Vishay Semiconduttori
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FCP11N60 |
MOSFET 600V 11A N-CH
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Fairchild Semiconductor
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TPH4R50ANH |
MOSFET U-MOSVIII-H 100V 93A 58nC MOSFET
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Toshiba
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IXTQ64N25P |
MOSFET 64 Amperi 250V 0,049 Rds
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IXYS
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IPA50R280CE |
MOSFET N-Ch 500V 13A TO220FP-3 CoolMOS CE
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Tecnologie Infineon
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IPW60R045CP |
MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP
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Tecnologie Infineon
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SQ7415AEN-T1_GE3 |
MOSFET 60V 16A 53W AEC-Q101 Qualificato
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Vishay Semiconduttori
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IPD50P04P4L-11 |
MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
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Tecnologie Infineon
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IPB120N04S4-02 |
MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
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Tecnologie Infineon
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IXFN170N30P |
MOSFET 138 Amperi 300V 0,018 Rds
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IXYS
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IXTQ52N30P |
MOSFET 52 Amperi 300V 0,066 Ohm Rds
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IXYS
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IPD90N04S4-04 |
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Tecnologie Infineon
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BSS123WQ-7-F |
MOSFET 100V N-Ch Enh FET 100Vdgr 20Vgss 200mA
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Diodi incorporati
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SI7540ADP-T1-GE3 |
MOSFET N & P-Chnl 20-V D-S
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Siliconix/Vishay
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FQPF15P12 |
MOSFET 120V QFET a canale P
|
Fairchild Semiconductor
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IRF9630PBF |
MOSFET P-Chan 200V 6,5 Amp
|
Vishay Semiconduttori
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IPD50N08S4-13 |
MOSFET N-CHANNEL 75/80V
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Tecnologie Infineon
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IPW65R065C7 |
MOSFET ALTO POWER_NEW
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Tecnologie Infineon
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FCD4N60TM |
MOSFET N-CH/600V/7A/SuperFET
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Fairchild Semiconductor
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FDC2612 |
MOSFET 200V NCh PowerTrench
|
Fairchild Semiconductor
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DMP6023LE-13 |
MOSFET P-Ch 60V Enh Modalità 145W 20Vgs 2569pF
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Diodi incorporati
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SI2333CDS-T1-GE3 |
MOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
|
Vishay Semiconduttori
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FDC642P |
MOSFET SSOT-6 P-CH -20V
|
Fairchild Semiconductor
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SIZF906DT-T1-GE3 |
MOSFET N Ch 30Vds 20Vgs
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Siliconix/Vishay
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SI7170DP-T1-GE3 |
MOSFET 30V 40A 48W 3.4mohm @ 10V
|
Vishay Semiconduttori
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IXFR140N30P |
MOSFET 82 Ampere 300V 0,026 Ohm Rds
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IXYS
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SI7228DN-T1-GE3 |
MOSFET 30V 26A 23W 20mohm @ 10V
|
Vishay Semiconduttori
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SI7942DP-T1-GE3 |
MOSFET Dual N-Ch 100V 49mohm @ 10V
|
Vishay Semiconduttori
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IPB65R110CFDA |
MOSFET N-Ch 650V 99.6A D2PAK-2
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Tecnologie Infineon
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IPD50P04P4-13 |
MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
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Tecnologie Infineon
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SIS413DN-T1-GE3 |
MOSFET -30V 9,4mOhm@10V -18A P-Ch G-III
|
Vishay Semiconduttori
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IPD35N10S3L-26 |
MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
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Tecnologie Infineon
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IPW60R070C6 |
MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6
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Tecnologie Infineon
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IPW65R041CFD |
MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2
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Tecnologie Infineon
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SI4190ADY-T1-GE3 |
MOSFET 100V 8,8mOhm@10V 18,4A N-Ch MV T-FET
|
Vishay Semiconduttori
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FDD8444 |
MOSFET bassa tensione
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Fairchild Semiconductor
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IPD90P04P4-05 |
MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2
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Tecnologie Infineon
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SI4909DY-T1-GE3 |
MOSFET 40V 8A Doppia PCH
|
Vishay Semiconduttori
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IPD30N10S3L-34 |
MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
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Tecnologie Infineon
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SIS412DN-T1-GE3 |
MOSFET 30V 12A 15,6W
|
Vishay Semiconduttori
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NDS352AP |
MOSFET P-Ch LL FET Modificazione
|
Fairchild Semiconductor
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IPB120P04P4L-03 |
MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2
|
Tecnologie Infineon
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IPD50N10S3L-16 |
MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T
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Tecnologie Infineon
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DMN2400UV-7 |
MOSFET 2N-CH 20V 1.33A SOT563
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Diodi incorporati
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DMN2004DWK-7 |
MOSFET 2N-CH 20V 0.54A SOT-363
|
Diodi incorporati
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FDS4559 |
MOSFET N/P-CH 60V 4.5A/3.5A 8-SO
|
ONSEMI
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FDPC8011S |
MOSFET 2N-CH 25V 13A/27A 8PQFN
|
ONSEMI
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DMN32D2LV-7 |
MOSFET 2N-CH 30V 0.4A SOT-563
|
Diodi incorporati
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FDS6930B |
MOSFET 2N-CH 30V 5.5A 8SOIC
|
ONSEMI
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