Filtri
Filtri
Semiconduttori
| Immagine | parte # | Descrizione | fabbricante | Di riserva | RFQ | |
|---|---|---|---|---|---|---|
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MT29F1G08ABBEAH4-ITX: E |
IC FLASH 1G PARALLEL 63VFBGA
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Tecnologia Micron
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N25Q032A11ESE40G |
IC FLASH 32M SPI 108MHZ 8SO
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Tecnologia Micron
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MT29F4G08ABAEAWP-IT: E |
IC FLASH 4G PARALLEL 48TSOP
|
Tecnologia Micron
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W25Q256FVEJF |
Memoria flash IC 256 MB
|
Winbond Electronics
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MT41J128M16JT-107G:K |
IC DRAM 2G PARALLEL 96FBGA
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Tecnologia Micron
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MT41J256M16HA-125: E |
IC DRAM 4G PARALLEL 96FBGA
|
Tecnologia Micron
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MT41K128M16JT-125: K |
IC DRAM 2G PARALLEL 96FBGA
|
Tecnologia Micron
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MT4117 MT4117 MT4118 MT4118 MT4118 MT4118 MT4118 MT4118 MT4118 |
IC DRAM 8G PARALLEL 96FBGA
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Tecnologia Micron
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MT41K512M8RH-125:E |
IC DRAM 4G PARALLEL 78FBGA
|
Tecnologia Micron
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TC58NVG0S3HTAI0 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
|
Toshiba
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K4B2G1646F-BCK0 |
96FBGA senza piombo e senza alogene
|
Semiconduttore Samsung
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K4H511638J-LCCC |
512Mb C-die DDR SDRAM Specifica
|
Semiconduttore Samsung
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C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1C1 |
1Gb E-die NAND Flash
|
Semiconduttore Samsung
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K4W1G1646E-HC12 |
Memoria grafica
|
Semiconduttore Samsung
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K4T1G084QF-BCF7 |
1 GB F-die DDR2 SDRAM
|
Semiconduttore Samsung
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K4B4G1646D-BCMA |
4Gb B-dado DDR3 SDRAM Olny x16
|
Semiconduttore Samsung
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MT48LC16M16A2P-6A: G |
IC DRAM 256M PARALLEL 54TSOP
|
Tecnologia Micron
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MT48LC8M16A2B4-6A: L |
IC DRAM 128M PARALLEL 54VFBGA
|
Tecnologia Micron
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MT48LC8M16A2P-6A: L |
IC DRAM 128M PARALLEL 54TSOP
|
Tecnologia Micron
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MT41K256M16HA-125IT: E |
IC DRAM 4G PARALLEL 96FBGA
|
Tecnologia Micron
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MTFC4GLGDQ-AIT |
IC FLASH 32G MMC 100LBGA
|
Tecnologia Micron
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MT2F16G08ABACAWP-ITZ:C |
IC FLASH 16G PARALLEL 48TSOP
|
Tecnologia Micron
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MT29F1G08ABAEAWP: E |
IC FLASH 1G PARALLEL 48TSOP
|
Tecnologia Micron
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JS28F256M29EWH |
IC FLASH 256M PARALLEL 56TSOP
|
Tecnologia Micron
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MT4F4G08ABAEAH4-IT:E |
IC FLASH 4G PARALLEL 63VFBGA
|
Tecnologia Micron
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MT29F8G08ABACAWP-IT: C |
IC FLASH 8G PARALLEL 48TSOP I
|
Tecnologia Micron
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M29W128GH7AN6E |
IC FLASH 128M PARALLEL 56TSOP
|
Tecnologia Micron
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MT41J128M16JT-093: K |
IC DRAM 2G PARALLEL 96FBGA
|
Tecnologia Micron
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MT4117M411M411M411M411 |
IC DRAM 4G PARALLEL 96FBGA
|
Tecnologia Micron
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N25Q032A13EF440E |
IC FLASH 32M SPI 108MHZ
|
Tecnologia Micron
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N25Q128A13EF740E |
IC FLASH 128M SPI 108MHZ 8VDFPN
|
Tecnologia Micron
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PC28F320J3F75A |
IC FLASH 32M PARALLEL 64EASYBGA
|
Tecnologia Micron
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MT48LC2M32B2P-6A: J |
IC DRAM 64M PARALLEL 86TSOP II
|
Tecnologia Micron
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MT48LC32M8A2P-6A:G |
IC DRAM 256M PARALLEL 54TSOP
|
Tecnologia Micron
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MT48LC4M16A2P-6A: J |
IC DRAM 64M PARALLEL 54TSOP
|
Tecnologia Micron
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W29N01GVSIAA |
IC FLASH 1G PARALLEL 48TSOP
|
Winbond Electronics
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W25Q16CLSSIG |
IC FLASH 16M SPI 50MHZ 8SOIC
|
Winbond Electronics
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W25Q32FVSSIQ |
IC FLASH 32M SPI 104MHZ 8SOIC
|
Winbond Electronics
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W25Q128FVPIQ |
IC FLASH 128M SPI 104MHZ 8WSON
|
Winbond Electronics
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PC28F320J3F75E |
IC FLASH 32M PARALLEL 64EASYBGA
|
Tecnologia Micron
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M25P128-VMF6PB |
IC FLASH 128M SPI 54MHZ 16SO W
|
Tecnologia Micron
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MT47H32M16NF-25E: H |
IC DRAM 512M PARALLEL 84FBGA
|
Tecnologia Micron
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MT29F32G08CBACAWP-Z: C |
IC FLASH 32G PARALLEL 48TSOP I
|
Tecnologia Micron
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MT2F4G4B4B4B4B4B4B4B4B5 |
IC FLASH 64G PARALLEL 48TSOP I
|
Tecnologia Micron
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N25Q256A81ESF40G |
IC FLASH 256M SPI 108MHZ 16SOP2
|
Tecnologia Micron
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EDW4032BABG-70-F-D |
IC RAM 4G PARALLEL 170FBGA
|
Tecnologia Micron
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W25Q128FVSIQ |
IC FLASH 128M SPI 104MHZ 8SOIC
|
Winbond Electronics
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W25Q256FVEIQ |
IC FLASH 256M SPI 104MHZ 8WSON
|
Winbond Electronics
|
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W25Q16DVSSIQ |
IC FLASH 16M SPI 104MHZ 8SOIC
|
Winbond Electronics
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W25Q80BLUXIG |
IC FLASH 8M SPI 80MHZ 8USON
|
Winbond Electronics
|
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